REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

文件：291.28 Kbytes 页数：12 Pages

IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

文件：283.53 Kbytes 页数：12 Pages

IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

Infineon

英飞凌

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

文件：69.48 Kbytes 页数：5 Pages

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

文件：69.48 Kbytes 页数：5 Pages

PANASONIC

松下

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 页数：52 Pages

NEC

瑞萨