IRGSL8B60K技术资料参数原装现货IRFIRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRGSL8B60K	文件：468.97 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR 文件：468.97 Kbytes 页数：13 Pages	IRF	IRF
IRGSL8B60KPBF	文件：450.29 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing 文件：450.29 Kbytes 页数：13 Pages	IRF	IRF
IRGB8B60K	文件：468.97 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR 文件：468.97 Kbytes 页数：13 Pages	IRF	IRF
IRGB8B60KPBF	文件：450.29 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing 文件：450.29 Kbytes 页数：13 Pages	IRF	IRF
IRGS8B60K	文件：468.97 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR 文件：468.97 Kbytes 页数：13 Pages	IRF	IRF

更多IRGSL8B60K供应商更新时间2026-1-29 14:00:00