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IRGB4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

IRGB4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRF

International Rectifier

IRGB4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform

IRF

International Rectifier

IRGB4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform

IRF

International Rectifier

IRGS4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

IRGS4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform

IRF

International Rectifier

IRGS4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRF

International Rectifier

IRGS4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

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