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AUIRGP50B60

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2V@IC=33A ·MinimalTailCurrent ·AutomotiveQualified APPLICATIONS ·AutomotiveHEVandEV ·WeldingConverters ·,PFC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

GP50B60PD

SMPSIGBT

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE Features •NPTTechnology,PositiveTemperatureCoefficient •LowerVCE(SAT) •LowerParasiticCapacitances •MinimalTailCurrent •HEXFREDUltraFastSoft-RecoveryCo-PackDiode •TighterDistributionofParameters •HigherReliability

IRF

International Rectifier

IRGP50B60PD

SMPSIGBT

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE Features •NPTTechnology,PositiveTemperatureCoefficient •LowerVCE(SAT) •LowerParasiticCapacitances •MinimalTailCurrent •HEXFREDUltraFastSoft-RecoveryCo-PackDiode •TighterDistributionofParameters •HigherReliability

IRF

International Rectifier

IRGP50B60PDPBF

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGP50B60PDPBF

WARP2SERIESIGBTWITHULTRAFASTSOFTRECOVERYDIODE

VCES=600V VCE(on)typ.=2.00V @VGE=15VIC=33A EquivalentMOSFETParameters RCE(on)typ.=61mΩ ID(FETequivalent)=50A Features •NPTTechnology,PositiveTemperatureCoefficient •LowerVCE(SAT) •LowerParasiticCapacitances •MinimalTailCurrent •H

IRF

International Rectifier

QCA50B60

TRANSISTORMODULE

QCA50BandQCB50AaredualDarlingtonpowertransistormoduleswhichhaveseries-connectedhighspeed,highpowerDarlingtontransistors.Eachtransistorhasareverseparalleledfastrecoverydiode. ●IC50A,VCEX400/600V ●Lowsaturationvoltageforhigherefficiency. ●Isolatedmountingbas

SANREX

Sansha Electric Mfg. Co. Ltd.

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