首页 >IRGP30B60KD-EP功率三极管>规格书列表

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRGS30B60	文件：328.22 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low	IRF International Rectifier	IRF
IRGS30B60K	文件：323.09 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance	IRF International Rectifier	IRF
IRGS30B60K	文件：328.22 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low	IRF International Rectifier	IRF
IRGS30B60KPBF	文件：385.77 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR	IRF International Rectifier	IRF
IRGS30B60KPBF	文件：385.77 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance	IRF International Rectifier	IRF
IRGSL30B60K	文件：328.22 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low	IRF International Rectifier	IRF
IRGSL30B60K	文件：323.09 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance	IRF International Rectifier	IRF
IRGSL30B60KPBF	文件：385.77 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance	IRF International Rectifier	IRF
MBR30B60CTH	文件：133.17 Kbytes Page：3 Pages	PowerSchottkyRectifier-30Amp60Volt	SIRECTSirectifier Global Corp. 矽莱克半导体深圳市矽莱克半导体有限公司	SIRECT
MBR30B60FCTH	文件：133.17 Kbytes Page：3 Pages	PowerSchottkyRectifier-30Amp60Volt	SIRECTSirectifier Global Corp. 矽莱克半导体深圳市矽莱克半导体有限公司	SIRECT

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