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IRG7PH42UD-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG7PH42UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG7PH42UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG7PH42U-EP

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(ON)trenchIGBTtechnology •Lowswitchinglosses •Maximumjunctiontemperature175°C •SquareRBSOA •100ofthepartstestedforILM •PositiveVCE(ON)temperatureco-efficient •Tightparameterdistribution •Lead-Free Benefits •Highefficiencyinawiderange

IRF

International Rectifier

IRG7PH42UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG7PH42UPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(ON)trenchIGBTtechnology •Lowswitchinglosses •Maximumjunctiontemperature175°C •SquareRBSOA •100ofthepartstestedforILM •PositiveVCE(ON)temperatureco-efficient •Tightparameterdistribution •Lead-Free Benefits •Highefficiencyinawiderange

IRF

International Rectifier

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