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IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •ShortCircuitRatedUltraFast:Optimizedforhigh operationfrequencies>5.0kHz,andShortCircuitRated to10μs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFRE

IRF

International Rectifier

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50KPBF

ShortCircuitRatedUltraFastIGBT

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati

IRF

International Rectifier

IRG4PC50S

INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A)

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC50S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandarddSpeedCoPackIGBT

IRF

International Rectifier

IRG4PC50S-P

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

•Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRF

International Rectifier

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

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