IRG4PC40UD数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

特性 Features

• UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-free

优势:
• Generation -4 IGBT's offer highest efficiencies available 
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing
• Designed to be a \"drop-in\" replacement for equivalent industry-standard Generation 3 IR IGBT's

简介

IRG4PC40UD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IRG4PC40UD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。