INSULATED GATE BIPOLAR TRANSISTOR

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT

文件：357.47 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件：357.47 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件：357.47 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

文件：157.2 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener

文件：169.87 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件：167.69 Kbytes 页数：8 Pages

IRF