INSULATED GATE BIPOLAR TRANSISTOR

文件：167.69 Kbytes 页数：8 Pages

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INSULATED GATE BIPOLAR TRANSISTOR

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

文件：167.96 Kbytes 页数：8 Pages

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Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF