首页 >IRG4BC20FS>规格书列表

零件型号下载 订购功能描述制造商 上传企业LOGO

IRG4BC20K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhi

IRF

International Rectifier

IRG4BC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAGASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •ShortCircuitRatedUltraFast:Optimizedfor highoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXF

IRF

International Rectifier

IRG4BC20KDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KD-S

IGBT

DESCRIPTION ·Verytightparameterdistribution ·LowVCEsat ·LowEMI APPLICATIONS ·IndustrialPowerSupplies ·Inductivecooking ·Softswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRG4BC20KD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULRTAFASTSOFRRECOVERYDIODE

Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC20KD-STRLP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

供应商型号品牌批号封装库存备注价格
Infineon Technologies
22+
TO220AB
9000
原厂渠道,现货配单
询价
Infineon Technologies
23+
TO220AB
9000
原装正品,支持实单
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
INFINEON
1503+
TO-220
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
Infineon Technologies
2022+
TO-220AB
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Infineon Technologies
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
IR
23+
TO-263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多IRG4BC20FS供应商 更新时间2025-7-28 15:48:00