Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF

TO-220

IR

国际整流器

上传：深圳庞田科技有限公司

TO-220

上传：深圳市旺财半导体有限公司

TO-220

INFINEON/英飞凌

上传：深圳市周芯芯半导体有限公司

INFINEON

英飞凌

上传：深圳市勤尚伟业电子有限公司