Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??

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IRF

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：172.77 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.98595 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.16522 Mbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司