首页 >IRFR220BTFMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-channelEnhancementModePowerMOSFET Features VDS=200V,ID=30A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
PowerMOSFET(Vdss=200V,Rds(on)max=600mohm,Id=5.0A) Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent TypicalSMPSTopologies ●T | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET200V,6.0A,0.65 Application Load/PowerSWwitching InterfacingSwitching BatteryManagementforUltraSmallPortable Electronics LogicLevelShift | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
HEXFETPowerMOSFET Applications •HighfrequencyDC-DCconverters •Lead-Free Benefits •LowGatetoDrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
SMPSMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF |
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