IRFR210中文资料HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A数据手册Infineon规格书
IRFR210规格书详情
描述 Description
DESCRIPTION
Third Generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
技术参数
- 型号：
IRFR210
- 功能描述：
MOSFET N-Chan 200V 2.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
148 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IR |
24+ |
TO 252 |
161396 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
23+ |
TO-252 |
35890 |
询价 | |||
IR |
25+ |
SOT-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
25+ |
TO263-2.5 |
18000 |
原厂直接发货进口原装 |
询价 | ||
VISHAY/威世 |
24+ |
TO-252 |
501758 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 | |||
IR |
25+23+ |
SMD |
37374 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
22+ |
SOT252 |
8000 |
原装正品支持实单 |
询价 |
