首页 >IRFR024NPBFMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechnigues. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
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