HEXFET® Power MOSFET

P-Channel 175°C Operating Temperature Surface Mount (IRFR6215) Straight Lead (IRFU6215) Advanced Process Technology Fast Switching Fully Avalanche Rated

文件：151.91 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

文件：141.22 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：246.37 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：3.84372 Mbytes 页数：10 Pages

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