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IRFPS37N50

PowerMOSFET(Vdss=500V,Rds(on)max=0.13ohm,Id=36A)

Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN 1001) Applications ●SwitchModePowerSupply(SMPS

IRF

International Rectifier

IRFPS37N50A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFPS37N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFPS37N50A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •Switch

VishayVishay Siliconix

威世科技威世科技半导体

IRFPS37N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.13ohm,Id=36A)

Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN 1001) Applications ●SwitchModePowerSupply(SMPS

IRF

International Rectifier

IRFPS37N50APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFPS37N50APBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •Switch

VishayVishay Siliconix

威世科技威世科技半导体

IRFPS37N50APBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)max=0.13廓,ID=36A)

Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN 1001) Applications ●SwitchModePowerSupply(SMPS

IRF

International Rectifier

SIHFPS37N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SiHFPS37N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

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