首页 >IRFP044NPBFMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=60V,Rds(on)=0.028ohm,Id=57A) Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFET PartNumberRDS(on)IDEyelets IRFY044C0.040Ω16*ACeramic IRFY044CM0.040Ω16*ACeramic HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-s | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETN-CHANNEL(BVdss=60V,Rds(on)=0.040ohm,Id=16A*) PartNumberRDS(on)IDEyelets IRFY044C0.040Ω16*ACeramic IRFY044CM0.040Ω16*ACeramic HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-s | IRF International Rectifier | IRF | ||
N-ChannelMOSFETinaHermeticallysealed | SEME-LAB Seme LAB | SEME-LAB |
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