Single channel high reliability power MOSFETs

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Infineon

英飞凌

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

文件：55.31 Kbytes 页数：7 Pages

INTERSIL

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

文件：164.15 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：962.94 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司