250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：692.69 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V N-Channel MOSFET

ONSEMI

安森美半导体

250V N-Channel MOSFET

文件：607.27 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators

文件：52.94 Kbytes 页数：6 Pages

Intersil

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

HEXFET® Power MOSFET VDSS = 250V RDS(on) = 2.0Ω ID = 2.2A

文件：169.07 Kbytes 页数：6 Pages

IRF