Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching

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INTERSIL

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A)

DESCRIPTION Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering tec

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.37621 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司