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IRFL024NTR

SurfaceMount

IRF

International Rectifier

IRFL024NTRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024Z

HEXFETPowerMOSFET

VDSS=55V RDS(on)=57.5mΩ ID=5.1A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionop

IRF

International Rectifier

IRFL024ZPBF

HEXFETPowerMOSFET

VDSS=55V RDS(on)=57.5mΩ ID=5.1A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionop

IRF

International Rectifier

IRFL024ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024ZTRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR024

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignedwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFR024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

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