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IRFI9530G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.48521 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530G

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see

文件:603.78 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530G

Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)

文件:174.46 Kbytes 页数:6 Pages

IRF

IRFI9530G

P-Channel MOSFET

FEATURES ·Drain Current -ID= -7.7A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件:298.78 Kbytes 页数:2 Pages

ISC

无锡固电

IRFI9530G_V01

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see

文件:603.78 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.48521 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530GPBF

HEXFET Power MOSFET

文件:3.52185 Mbytes 页数:7 Pages

IRF

IRFI9530GPBF

P-Channel 100 V (D-S) MOSFET

文件:997.8 Kbytes 页数:7 Pages

VBSEMI

微碧半导体

IRFI9530G

HEXFET Power MOSFET

Infineon

英飞凌

IRFI9530N

MOSFET P-CH 100V 7.7A TO-220FP

Infineon

英飞凌

详细参数

  • 型号:

    IRFI9530

  • 功能描述:

    MOSFET P-Chan 100V 7.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR/VISHAY
25+
TO-220F
45000
IR/VISHAY全新现货IRFI9530GPBF即刻询购立享优惠#长期有排单订
询价
VISHAY
12+
1050
TO-220FP
询价
VISHAY/威世
2021+
TO-220F
9000
原装现货,随时欢迎询价
询价
VISHAY(威世)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
VISHAY
24+/25+
TO-220FP
1050
原装正品现货库存价优
询价
Vishay
24+
NA
3000
进口原装正品优势供应
询价
VishayPCS
1865
全新原装 货期两周
询价
IR原装
25+23+
TO-220F
23199
绝对原装正品全新进口深圳现货
询价
VISHAY
2018+
26976
代理原装现货/特价热卖!
询价
SILICONIXVISHAY
24+
NA
1010
原装现货,专业配单专家
询价
更多IRFI9530供应商 更新时间2025-11-23 14:14:00