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IRFI1010NPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRFI1010NPBF
- 功能描述：
MOSFET MOSFT 55V 44A 12mOhm 86.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
8000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
IR |
24+ |
TO-220-3 |
879 |
询价 | |||
IR |
21+ |
TO-220 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
25000 |
原装正品,假一赔十! |
询价 | ||
IR |
24+ |
NA |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
23+ |
TO-220F |
8238 |
询价 | |||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 |
