IRFF9230数据手册Renesas中文资料规格书
IRFF9230规格书详情
描述 Description
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• -4.0A, -200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
技术参数
- 型号：
IRFF9230
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET P-CH 200V 4A 3-Pin TO-39
- 功能描述：
TRANS MOSFET P-CH 200V 4A 3PIN TO-39 - Bulk
- 功能描述：
200V SINGLE P-CHANNEL HI-REL MOSFET
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 功能描述：
P CH MOSFET -200V 4A TO-205AF
- 功能描述：
P CH MOSFET, -200V, 4A, TO-205AF
- 功能描述：
P CH MOSFET, -200V, 4A, TO-205AF; Transistor
- Polarity：
P Channel; Continuous Drain Current
- Id：
-4A; Drain Source Voltage
- Vds：
-200V; On Resistance
- Rds(on)：
800mohm; Rds(on) Test Voltage
- Vgs：
-10V; Threshold Voltage Vgs
- Typ：
-4V ;RoHS
- Compliant：
No
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
询价 | ||
IR |
24+ |
CAN |
13500 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
22+ |
CAN |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
IR |
1844+ |
TO-39 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
22+ |
CN3 |
8000 |
原装正品支持实单 |
询价 | ||
INTERSIL |
24+ |
CAN |
1000 |
询价 | |||
IR |
QQ咨询 |
CAN |
792 |
全新原装 研究所指定供货商 |
询价 | ||
IR |
21+ |
TO-39 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
HARRIS |
2025+ |
TO-39 |
4035 |
全新原厂原装产品、公司现货销售 |
询价 | ||
HARRIS/哈里斯 |
23+ |
CAN3 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
