IRFF9230中文资料-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET数据手册Renesas规格书
IRFF9230规格书详情
描述 Description
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• -4.0A, -200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
技术参数
- 型号：
IRFF9230
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET P-CH 200V 4A 3-Pin TO-39
- 功能描述：
TRANS MOSFET P-CH 200V 4A 3PIN TO-39 - Bulk
- 功能描述：
200V SINGLE P-CHANNEL HI-REL MOSFET
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 功能描述：
P CH MOSFET -200V 4A TO-205AF
- 功能描述：
P CH MOSFET, -200V, 4A, TO-205AF
- 功能描述：
P CH MOSFET, -200V, 4A, TO-205AF; Transistor
- Polarity：
P Channel; Continuous Drain Current
- Id：
-4A; Drain Source Voltage
- Vds：
-200V; On Resistance
- Rds(on)：
800mohm; Rds(on) Test Voltage
- Vgs：
-10V; Threshold Voltage Vgs
- Typ：
-4V ;RoHS
- Compliant：
No
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
IR |
0539+ |
CAN |
112 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
22+ |
CAN |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
IR |
06+ |
CAN |
700 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
IR |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
询价 | ||
IR |
24+ |
CAN |
13500 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
2450+ |
CN3 |
6540 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
22+ |
CN3 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
QQ咨询 |
CAN |
792 |
全新原装 研究所指定供货商 |
询价 | ||
INTERSIL |
24+ |
CAN |
1000 |
询价 |
