首页 >IRFD120PBFMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersthe | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-205AF) Description TheHEXFET®technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE | IRF International Rectifier | IRF | ||
N-ChannelEnhancement-ModePowerMOSField-EffectTransistors 5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
IEEE802.3afCompatible IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AvalancheRuggedTechnology FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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