| 订购数量 | 价格 |
|---|---|
| 1+ | |
| 1000+ |
首页>IRFBE20STRL>芯片详情
IRFBE20STRL_VISHAY/威世_MOSFET N-CH 800V 1.8A D2PAK川科4部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
IRFBE20STRL
- 功能描述:
MOSFET N-CH 800V 1.8A D2PAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
-
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商
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