订购数量 | 价格 |
---|---|
1+ |
IRFBE20_IR/国际整流器_MOSFET 800V Single N-Channel HEXFET一线半导体
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产品属性
- 类型
描述
- 型号
:IRFBE20
- 漏源电压(Vdss)
:800V
- 栅源极阈值电压(最大值)
:4V @ 250uA
- 漏源导通电阻(最大值)
:6.5 Ω @ 1.1A,10V
- 类型
:N 沟道
- 功率耗散(最大值)
:54W
供应商
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