首页 >IRF9Z30-LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-18A@TC=25℃ ·DrainSourceVoltage-VDSS=-50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET FEATURES •P-channelversatility •Compactplasticpackage •Fastswitching •Lowdrivecurrent •Easeofparalleling •Excellenttemperaturestability •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformation | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
FastSwitching | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
P-CHANNEL50VOLTPOWERMOSFETS -50Volts,0.14Ohm,HEXFETTo-220ABPlasticPackage TheHEXFET®technologyisthekeytointernationalRectifiersadvancedlineofpwoerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductance | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPOWERMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
FastSwitching | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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