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IRF9Z24NS

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF9Z24NS

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24NS

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z24NS

PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-12A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24NSPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF9Z24NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF9Z24NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF9Z24NSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF9Z24NSTRR

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

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