首页 >IRF9Z14L.S>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-6.7A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
RepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET FEATURES •Advancedprocesstechnology •Surface-mount(IRF9Z14S,SiHF9Z14S) •Low-profilethrough-hole(IRF9Z14L,SiHF9Z14L) •175°Coperatingtemperature •Fastswitching •P-channel •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET(VDSS=-60V,RDS(on)=0.50廓,ID=-6.7A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-6.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Advancedprocesstechnology •Surface-mount(IRF9Z14S,SiHF9Z14S) •Low-profilethrough-hole(IRF9Z14L,SiHF9Z14L) •175°Coperatingtemperature •Fastswitching •P-channel •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ROHS |
SOT-252 |
688888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
22+ |
SOT-252 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
SOT-252 |
8000 |
只做原装现货 |
询价 | ||
VishayIR |
07+/08+ |
TO-262 |
1077 |
询价 | |||
IR |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
VISHAY |
23+ |
TO262 |
7750 |
全新原装优势 |
询价 | ||
IR |
2020+ |
TO-262 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY |
1809+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
23+ |
TO-262 |
10000 |
公司只做原装正品 |
询价 | ||
Vishay Siliconix |
21+ |
TO2623 Long Leads I2Pak TO262A |
13880 |
公司只售原装,支持实单 |
询价 |
相关规格书
更多- IRF9Z24
- IRF9Z24S
- IRF9Z34N
- IRF9Z34S
- IRFB31N20D
- IRFB4710
- IRFBC20
- IRFBC40
- IRFBC40S
- IRFBE30
- IRFBF30
- IRFBG30
- IRFD014
- IRFD024
- IRFD120
- IRFD210
- IRFD420
- IRFD9020
- IRFD9110
- IRFD9210
- IRFF110
- IRFF130
- IRFF220
- IRFF310
- IRFF420
- IRFF9120
- IRFF9220
- IRFI630G
- IRFI740G
- IRFI9620G
- IRFIBC30G
- IRFIBE30G
- IRFL014TR
- IRFL110TR
- IRFL210TR
- IRFL4105
- IRFL4310TR
- IRFL9014TR
- IRFP044
- IRFP048
- IRFP054
- IRFP064
- IRFP140
- IRFP150
- IRFP150NPBF
相关库存
更多- IRF9Z24N
- IRF9Z34
- IRF9Z34NPBF
- IRFB11N50A
- IRFB41N15D
- IRFB9N60A
- IRFBC30
- IRFBC40A
- IRFBE20
- IRFBF20
- IRFBG20
- IRFD010
- IRFD020
- IRFD110
- IRFD123
- IRFD220
- IRFD9014
- IRFD9024
- IRFD9120
- IRFD9220
- IRFF120
- IRFF210
- IRFF230
- IRFF330
- IRFF430
- IRFF9130
- IRFF9230
- IRFI640G
- IRFI840G
- IRFI9630G
- IRFIBC40G
- IRFL014
- IRFL110
- IRFL210
- IRFL214
- IRFL4310
- IRFL9014
- IRFL9110
- IRFP044N
- IRFP048N
- IRFP054N
- IRFP064N
- IRFP140N
- IRFP150N
- IRFP22N50A