首页 >IRF9630PBF(IR)>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
UPSNetworkManagementCard2 | SCHNEIDERSchneider electric 施耐德施耐德电气 | SCHNEIDER | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
6.5A,200V,0.800Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Repetitiveavalancherated DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
询价 | |||
IR |
23+ |
8000 |
只做原装现货 |
询价 | |||
SILICONIX (VISHAY) |
23+ |
原厂原封 |
3000 |
订货1周 原装正品 |
询价 | ||
VISHAY(威世) |
23+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
VISHAY(威世) |
23+ |
TO220AB |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
VISHAY |
1651+ |
TO-220AB |
5600 |
只做原装进口,假一罚十 |
询价 | ||
VISHAY/威世 |
20+ |
TO-220AB |
1000 |
进口原装现货假一赔万力挺实单 |
询价 | ||
VISHAY/威世 |
23+ |
98000 |
询价 | ||||
23+ |
N/A |
56000 |
一级代理放心采购 |
询价 | |||
VISHAY/威世 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 |
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