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IRFB9540

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFI9540G

PowerMOSFET

FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •P-channel •175°Coperatingtemperature •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半导体

IRFI9540G

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI9540G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI9540GPBF

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFI9540GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI9540GPBF

HEXFET짰PowerMOSFET

IRF

International Rectifier

IRFI9540N

HEXFETPowerMOSFET

IRF

International Rectifier

IRFS9540

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS9540

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-19A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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