| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF9510 | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A) | Infineon 英飞凌 | Infineon | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件：4.11368 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件：1.71879 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid 文件：201.76 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
文件：176.75 Kbytes 页数：6 Pages | IRF | IRF | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid 文件：201.76 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
IRF9510
- 功能描述：
MOSFET P-Chan 100V 4.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
15000 |
全新原装的现货 |
询价 | ||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
24+/25+ |
15 |
原装正品现货库存价优 |
询价 | |||
HARRIS |
24+ |
TO-220 |
2 |
询价 | |||
IR |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
IR |
05+ |
原厂原装 |
4705 |
只做全新原装真实现货供应 |
询价 | ||
VISHAY/IR |
24+ |
原厂封装 |
26050 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
25+ |
TO220 |
60 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
询价 |
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