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IRFHM830DTRPBF

SynchronousMOSFETforBuckConverters

IRF

International Rectifier

IRFHM830PBF

CompatiblewithExistingSurfaceMountTechniques

IRF

International Rectifier

IRFHM830PBF

BatteryOperatedDCMotorInverterMOSFET

IRF

International Rectifier

IRFHM830PBF

BatteryOperatedDCMotorInverterMOSFET

Features LowRDSon(

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRFHM830TRPBF

BatteryOperatedDCMotorInverterMOSFET

IRF

International Rectifier

IRFHM830TRPBF

BatteryOperatedDCMotorInverterMOSFET

Features LowRDSon(

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRFI830

500VN-ChannelMOSFET

GeneralDescriptionTheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI830B

500VN-ChannelMOSFET

GeneralDescriptionTheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI830G

PowerMOSFET(Vdss=500V,Rds(on)=1.5ohm,Id=3.1A)

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialap

IRF

International Rectifier

IRFI830G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

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