SMPS MOSFET

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

文件：214.59 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

文件：194.6 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

文件：194.6 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

Infineon

英飞凌