IRF7425中文资料IRF数据手册PDF规格书
IRF7425规格书详情
Description
These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
● Ultra Low On-Resistance
● P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
产品属性
- 型号:
IRF7425
- 功能描述:
MOSFET P-CH 20V 15A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
SOP8 |
30000 |
原装现货,假一赔十. |
询价 | ||
IR |
22+ |
SOP-8 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
IR |
22+ |
SOP-8 |
164801 |
原装正品现货,可开13个点税 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
6000 |
面议 |
19 |
SOP8 |
询价 | ||
IOR |
23+ |
SOP8 |
20000 |
全新原装假一赔十 |
询价 | ||
IR |
2025+ |
SOP-8 |
4675 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IR |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
2023+ |
SO-8 |
5800 |
进口原装,现货热卖 |
询价 | ||
IR |
24+ |
SOIC-8 |
9600 |
原装现货,优势供应,支持实单! |
询价 |