IRF7420中文资料IRF数据手册PDF规格书
IRF7420规格书详情
Description
These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
● Ultra Low On-Resistance
● P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
产品属性
- 型号:
IRF7420
- 功能描述:
MOSFET P-CH 12V 11.5A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
询价 | ||
IOR |
24+ |
SOP8 |
139 |
询价 | |||
IR |
1923+ |
SOP-8 |
10000 |
公司进口原装特价处理 |
询价 | ||
IR |
17+ |
SO8 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
24+ |
SOIC-8 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
INFINEON/英飞凌 |
2021+ |
60000 |
十年专营原装现货,假一赔十 |
询价 | |||
IR |
08+ |
SOP8 |
3300 |
全新原装现货100真实自己公司 |
询价 | ||
IR |
6000 |
面议 |
19 |
SOP8 |
询价 | ||
英飞凌/INFINEON |
22+ |
SOP8L |
25213 |
原装正品现货 |
询价 | ||
24+ |
SMD |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 |