HEXFET Power MOSFET

Description These HEXFET®Power MOSFETs in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive aval

文件：257.48 Kbytes 页数：9 Pages

IRF

HEXFETPOWERMOSFET

文件：243.23 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌

Ultra Low On-Resistance

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：244.97 Kbytes 页数：9 Pages

IRF

Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

文件：422.14 Kbytes 页数：8 Pages

UMW

友台半导体

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

文件：394.37 Kbytes 页数：8 Pages

EVVOSEMI

翊欧