IRF740S中文资料意法半导体数据手册PDF规格书
IRF740S规格书详情
DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on) = 0.48 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
产品属性
- 型号：
IRF740S
- 功能描述：
MOSFET N-Chan 400V 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO263 |
32732 |
原装正品代理渠道价格优势 |
询价 | ||
IR |
18+ |
SOT-263 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
22+ |
SOT263 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 | |||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
D2PAK |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
询价 | ||
SILICONIX (VISHAY) |
23+ |
原厂原封 |
8800 |
订货1周 原装正品 |
询价 | ||
IR |
22+ |
TO263 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 |
