IRF6665PBF中文资料IRF数据手册PDF规格书

描述 Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.

特性 Features

• Latest MOSFET Silicon technology

• Key parameters optimized for Class-D audio amplifier applications

• Low RDS(on) for improved efficiency

• Low Qg for better THD and improved efficiency

• Low Qrr for better THD and lower EMI

• Low package stray inductance for reduced ringing and lower EMI

• Can deliver up to 100W per channel into 8Ω with no heatsink

• Dual sided cooling compatible

• Compatible with existing surface mount technologies

• RoHS compliant containing no lead or bromide

• ead-Free (Qualified up to 260°C Reflow)