IRF6665中文资料IRF数据手册PDF规格书
IRF6665规格书详情
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink
• Dual sided cooling compatible
• Compatible with existing surface mount technologies
• Lead and Bromide Free
产品属性
- 型号：
IRF6665
- 功能描述：
MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
13048 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
IR |
24+ |
NA/ |
20030 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ir |
24+ |
500000 |
行业低价,代理渠道 |
询价 | |||
原装IR |
06+ |
DirectFET |
7030 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON/IR |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
IR |
23+ |
SMD |
14324 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
21+ |
SMD |
6000 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
询价 | ||
Infineon/英飞凌 |
24+ |
SMD |
25000 |
原装正品,假一赔十! |
询价 | ||
IR |
22+ |
QFN |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
7000 |
工厂现货!原装正品! |
询价 |
