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IRF6637TRPBF中文资料IRF数据手册PDF规格书
IRF6637TRPBF规格书详情
描述 Description
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHS Compliant
● Lead-Free (Qualified up to 260°C Reflow)
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses and Switching Losses
● Low Profile (<0.7mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6637TRPBF
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
MG-WDSON-5 |
25000 |
原装正品,假一赔十! |
询价 | ||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
IR |
2016+ |
QFN |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
IR |
25+ |
DirectFET |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
1948+ |
QFN |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 | ||
Infineon/英飞凌 |
21+ |
MG-WDSON-5 |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
24+ |
QFN |
1559 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR/INFINEON |
24+ |
DirectFET |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
询价 | ||
IR |
2402+ |
DIRECTFETMP |
8324 |
原装正品!实单价优! |
询价 |