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IRFI614B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI614G

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.1A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFI614G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

IRFI614G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI614GPBF

HEXFET짰PowerMOSFET

IRF

International Rectifier

IRFI614GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

IRFI614GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFS614A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS614B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS614B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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