首页 >IRF540A>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRF540N

N-ChannelMosfetTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.044Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperat

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF540N

AdvancedProcessTechnology

VDSS=100V RDS(on)=44mΩ ID=33A Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethrougho

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540N

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF540N

33A,100V,0.040Ohm,N-Channel,PowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER ElectricalModels -SpiceandSABER ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF540N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF540NL

PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A)

AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

IRF

International Rectifier

IRF540NL

HEXFET짰PowerMOSFET

IRF

International Rectifier

IRF540NL

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540NL

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-262package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF540NLPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

详细参数

  • 型号:

    IRF540A

  • 功能描述:

    MOSFET TO-220 N-Ch A-FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2025+
TO-220
32560
原装优势绝对有货
询价
FAIRCHILD
23+
TO-220
9526
询价
仙童
06+
TO-220
5000
原装
询价
IR
17+
TO-220
6200
询价
FAIRCHILD
23+
TO220
7750
全新原装优势
询价
IR
24+
TO-220
10000
原装现货假一罚十
询价
SPE
2020+
TO-220
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
fsc
24+
N/A
6980
原装现货,可开13%税票
询价
IR
24+
TO-220
5000
只做原装公司现货
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多IRF540A供应商 更新时间2025-5-23 16:06:00