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IRFI520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI520A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFI520G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520G

HEXFETPOWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI520G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520GPBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI520GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520N

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=7.6A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFI520NPBF

HEXFET짰PowerMOSFET

IRF

International Rectifier

详细参数

  • 型号:

    IRF520S

  • 功能描述:

    MOSFET N-Chan 100V 9.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO-263
501294
免费送样原盒原包现货一手渠道联系
询价
INTERNATIONA
05+
原厂原装
18816
只做全新原装真实现货供应
询价
IR
24+
D2-Pak
8866
询价
IR
23+
D2-Pak
8600
全新原装现货
询价
IR
23+
TO-263
35890
询价
IR
2018+
TO263
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR/VISH
24+
65230
询价
IR
2447
D2-PAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多IRF520S供应商 更新时间2025-5-19 16:40:00