IRF3205PBF技术资料参数市场行情中科创达-114ic电子网

首页 >IRF3205P>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IRF3205PBF	文件：176.66 Kbytes Page：8 Pages	HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：176.66 Kbytes 页数：8 Pages	IRF	IRF
IRF3205PBF.	文件：92.66 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the 文件：92.66 Kbytes 页数：8 Pages	IRF	IRF
IRF3205PBF	文件：221.54 Kbytes Page：8 Pages	Advanced Process Technology 文件：221.54 Kbytes 页数：8 Pages	IRF	IRF
IRF3205PBF_15	文件：221.54 Kbytes Page：8 Pages	Advanced Process Technology 文件：221.54 Kbytes 页数：8 Pages	IRF	IRF
IRF3205PC	文件：300 bytes Page：1 Pages	Planar-MOSFET	THUNDER 中科创达	THUNDER

更多IRF3205P供应商更新时间2025-12-11 16:08:00