| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFET짰 Power MOSFET 文件：291.97 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET® Power MOSFET | Infineon 英飞凌 | Infineon | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 页数：12 Pages | IRF | IRF | ||
Advanced Process Technology 文件：294.32 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages | KERSEMI | KERSEMI |
详细参数
- 型号：
IRF1404ZG
- 功能描述：
MOSFET MOSFT 40V 190A 3.7mOhm 100nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
VB |
21+ |
TO-220AB |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
Infineon Technologies |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
23+ |
TO-220-3 |
48527 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
询价 |
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