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IRF1404SPBF中文资料PDF规格书
IRF1404SPBF规格书详情
Description
Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
产品属性
- 型号:
IRF1404SPBF
- 功能描述:
MOSFET 60V 1 N-CH HEXFET 4mOhms 160nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
9526 |
询价 | |||
IR |
22+23+ |
TO263 |
73049 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
21+ |
TO-263 |
20000 |
原装现货假一罚十 |
询价 | ||
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
21+ |
65230 |
询价 | ||||
IR |
21+ |
TO-263 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
Infineon Technologies |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原装正品,支持实单 |
询价 | ||
IR |
2022 |
TO263 |
176 |
原厂原装正品,价格超越代理 |
询价 | ||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-263-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
2305+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 |